BTNA44A3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTNA44A3
Features
• High breakdown voltage. (BVCEO =400V)
• Low saturation voltage, typically VCE(sat) =60mV at IC/IB=10mA/1mA.
• Complementary to BTPA94A3
Spec. No. : C211A3
Issued Date : 2003.03.026
Revised Date :2005.03.21
Page No. : 1/5
Symbol
BTNA44A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25℃)
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦380µs,Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
BTNA44A3
EBC
Limit
Unit
400
V
400
V
6
V
300
mA
0.625
W
150
°C
-55~+150
°C
CYStek Product Specification