BTNA42A3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C209A3-H
Issued Date : 2003.03.18
Revised Date :
Page No. : 1/4
BTNA42A3
Description
• High breakdown voltage. (BVCEO=300V)
• Low collector output capacitance. (Typ. 3pF at VCB =30V)
• Ideal for chroma circuit.
Symbol
BTNA42A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
500
mA
Power Dissipation
Pd
625
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
BTNA42A3
CYStek Product Specification