BTN6718D3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN6718D3
Spec. No. : C319D3
Issued Date : 2008.05.13
Revised Date :
Page No. : 1/5
Features
• High breakdown voltage, BVCEO≥ 100V
• Large continuous collector current capability, IC(MAX)=1A(DC)
• Low collector saturation voltage
• Pb-free package
Symbol
BTN6718D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
Power Dissipation(TA=25℃)
Power Dissipation(TC=25℃)
Junction Temperature
Storage Temperature
Note : Single pulse, Pw≤300μs, Duty Cycle≤2%.
BTN6718D3
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj
Tstg
Limits
Unit
180
V
100
V
5
V
1
A
2 (Note )
A
0.2
A
1.6
W
10
W
150
°C
-55~+150
°C
CYStek Product Specification