BTN5551K3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN5551K3
Spec. No. : C208K3
Issued Date : 2012.06.28
Revised Date : 2012.10.02
Page No. : 1/6
Features
• High breakdown voltage, BVCEO≥ 160V
• Pb-free lead plating package
Symbol
BTN5551K3
Outline
TO-92L
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : Pulse test, pulse width≤300μs, duty cycle≤2%
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
RθJA
Tj ; Tstg
Limits
180
160
6
600
2 (Note)
200
900
139
-55~+150
Unit
V
V
V
mA
A
mA
mW
°C/W
°C
BTN5551K3
CYStek Product Specification