BTD9065D3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – BTD9065D3 CYStek Product Specification

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD9065D3
BVCEO
IC
RCESAT
Spec. No. : C847D3
Issued Date : 2011.03.25
Revised Date :
Page No. : 1/5
20V
5A
160mΩ(typ.)
Features
• Low VCE(sat), VCE(sat)=0.65 V (typical), at IC / IB = 4A / 0.1A
• Excellent current gain characteristics
• Pb-free lead plating package
Symbol
BTD9065D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation(TA=25℃)
Power Dissipation(TC=25℃)
Junction Temperature
Storage Temperature
Note : *1. Single Pulse , Pw≦380μs,Duty≦2%.
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
BTD9065D3
ECB
Limits
Unit
50
V
40
V
20
V
8
V
5
10 *1
A
1.5
W
10
150
°C
-55~+150
°C
CYStek Product Specification