BTD5213M3 Datasheet, PDF (1/3 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD5213M3
Features
• High VCEO, VCEO=80V
• High IC, IC(DC)=1A
• Low VCE(sat)
• Good current gain linearity
• Complementary to BTB1260M3
Symbol
Outline
Spec. No. : C310M3
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/3
BTD5213M3
SOT-89
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm
3. When mounted on ceramic with area measuring 40×40×1 mm
BTD5213M3
BCE
Limit
100
80
5
1
2 (Note 1)
0.6
1 (Note 2)
2 (Note 3)
208
125 (Note 2)
62.5 (Note 3)
150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
CYStek Product Specification