BTD5213L3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD5213L3
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2011.07.28
Page No. : 1/7
Description
General purpose mainly intended for use in medium power industrial application and for audio amplifier
output stage.
Features
• High collector current and low VCE(SAT).
• Complement to BTB5213L3.
• Pb-free lead plating package.
Symbol
BTD5213L3
Outline
SOT-223
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation @TC=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
BTD5213L3
BCE
Limits
Unit
180
V
100
V
5
V
1
A
1.5
A
2
W
150
°C
-55~+150
°C
CYStek Product Specification