BTD2150AD3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150AD3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA
• Excellent current gain characteristics
• Complementary to BTB1424AD3
• Pb-free package
Spec. No. : C848D3
Issued Date : 2004.07.06
Revised Date : 2005.04.20
Page No. : 1/4
Symbol
BTD2150AD3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.
BTD2150AD3
EC B
Limits
Unit
50
V
50
V
5
V
3
7 (Note)
A
1
W
10
150
°C
-55~+150
°C
CYStek Product Specification