BTD2098LN3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2098LN3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386LN3
• Pb-free package
Spec. No. : C850N3
Issued Date : 2004.01.28
Revised Date :2005.07.15
Page No. : 1/5
Symbol
BTD2098LN3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
ICP
Power Dissipation
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1.Single Pulse Pw≦350µs, Duty≦2%.
2.When mounted on a ceramic board with area of 600mm²×0.8mm
Limits
Unit
25
V
15
V
6
V
5
A
8 (Note 1)
A
0.9 (Note 2)
W
150
°C
-55~+150
°C
BTD2098LN3
CYStek Product Specification