BTD2061FP Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2061FP
Spec. No. : C608FP
Issued Date : 2005.09.07
Revised Date :
Page No. : 1/4
Features
• Low saturation voltage, typically VCE(sat)=0.2V at IC/IB=2A/0.2A.
• Excellent DC current gain characteristics.
• Wide SOA(safe operating area).
• Pb-free package.
Symbol
BTD2061FP
Outline
TO-220FP
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
BTD2061FP
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
BCE
Limits
80
60
5
3
6 (Note 1)
2
30
62.5
4.167
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification