BTD1980J3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD1980J3
Spec. No. : C654J3
Issued Date : 2004.03.18
Revised Date :
Page No. : 1/4
Description
The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
speed switching application.
Equivalent Circuit
BTD1980J3
C
B
Outline
TO-252
E
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25℃)
Pd(TC=25℃)
RθJA
RθJC
Tj
Tstg
Limits
130
120
5
4
6 (Note )
1.5
20
83.3
6.25
150
-55~+150
Unit
V
V
V
A
A
W
W
°C/W
°C/W
°C
°C
BTD1980J3
CYStek Product Specification