BTD1857AT3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855T3
Issued Date : 2004.12.15
Revised Date :
Page No. : 1/4
BTD1857AT3
Description
• High BVCEO
• High current capability
• Complementary to BTB1236AT3
Symbol
BTD1857AT3
Outline
TO-126
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @TA=25℃
Power Dissipation @TC=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
BTD1857AT3
ECB
Limits
Unit
180
V
160
V
5
V
1.5
A
3
A
1
W
20
W
150
°C
-55~+150
°C
CYStek Product Specification