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BTD1805I3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor | |||
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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805I3
Spec. No. : C820I3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 1/ 4
Description
The device is manufactured in NPN planar technology by using a âBase Islandâ layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
⢠Very low collector-to-emitter saturation voltage
⢠Fast switching speed
⢠High current gain characteristic
⢠Large current capability
Applications
⢠CCFL drivers
⢠Voltage regulators
⢠Relay drivers
⢠High efficiency low voltage switching applications
Symbol
BTD1805I3
Outline
TO-251
Bï¼Base
Cï¼Collector
Eï¼Emitter
BTD1805I3
BB CC E
CYStek Product Specification
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