BTD1782N3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1782N3
Spec. No. : C304N3
Issued Date : 2006.06.12
Revised Date : 2007.12.11
Page No. : 1/6
Description
The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
• Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA
• High breakdown voltage, VCEO=80V (min.)
• Complements to BTB1198N3
• Pb-free package
Symbol
BTD1782N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj
Tstg
BTD1782N3
Limits
80
80
5
0.5
200
625
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
CYStek Product Specification