BTD1768N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1768N3
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :
Page No. : 1/4
Description
The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
• Low collector saturation voltage
• High breakdown voltage, VCEO=80V (min.)
• High collector current, IC(max)=1A (DC)
Symbol
BTD1768N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
BTD1768N3
Limits
100
80
5
1
2 (Note)
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
CYStek Product Specification