BTD1766M3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1766M3
Features
• Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
• Excellent current gain characteristics
• Complementary to BTB1188M3
Spec. No. : C842M3
Issued Date : 2003.05.25
Revised Date :
Page No. : 1/4
Symbol
BTD1766M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
VCBO
VCEO
VEBO
IC
ICP
Pd
Power Dissipation
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse , Pw=10ms
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
BTD1766M3
Limits
Unit
40
V
30
V
5
V
2
A
5 (Note 1)
A
0.5
W
2 (Note 2)
W
150
°C
-55~+150
°C
CYStek Product Specification