BTD1383L3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1383L3
Spec. No. : C214L3
Issued Date : 2005.01.20
Revised Date :
Page No. : 1/4
Description
• The BTD1383L3 is a darlington amplifier transistor.
Symbol
BTD1383L3 _C
B
B：Base
C：Collector _E
E：Emitter
Outline
SOT-223
C
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
32
V
Emitter-Base Voltage
VEBO
10
V
Collector Current (DC)
IC
0.3
A
Collector Current (Pulse)
ICP
1.5 (Note 1)
A
Power Dissipation @TA=25°C
Pd
1.5 (Note 2)
W
Thermal Resistance, Junction to Ambient
RθJA
83.3 (Note 2)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note : 1.Single pulse test, PW=10ms
2 .Device mounted on a glass epoxy printed circuit board 1.575 in × 1.575 in × 0.059 in : mounting pad for the collector
lead min 0.93 in².
BTD1383L3
CYStek Product Specification