BTC5103J3 Datasheet, PDF (1/3 Pages) Cystech Electonics Corp. – High Speed Switching Transistor

CYStech Electronics Corp.
High Speed Switching Transistor
BTC5103J3
Features
• Low VCE(sat), VCE(sat)=0.15 V (typical), at IC / IB = 3A / 0.15A
• High Switching Speed
• Wide SOA
• Complementary to BTA1952J3
Spec. No. : C651J3
Issued Date : 2003.04.24
Revised Date :
Page No. : 1/3
Symbol
BTC5103J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC(DC)
IC(Pulse)
5
10 *1
A
Power Dissipation
Pd(TA=25℃)
Pd(TC=25℃)
1
W
10 *2
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note : *1. Single Pulse Pw=100ms
*2. Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger
BTC5103J3
CYStek Product Specification