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BTC4621K3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor | |||
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CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4621K3
Spec. No. : C210K3
Issued Date : 2006.12.08
Revised Date :
Page No. : 1/4
Features
⢠High breakdown voltage. (BVCEO =350V)
⢠Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
⢠Pb-free package
Symbol
BTC4621K3
Bï¼Base
Cï¼Collector
Eï¼Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation (TA=25â)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj
Tstg
BTC4621K3
Limit
Unit
350
V
350
V
6
V
100
200
mA
50
mA
1
W
150
°C
-55~+150
°C
CYStek Product Specification
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