BTC3906S3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC3906S3
Spec. No. : C208S3
Issued Date : 2013.05.14
Revised Date :
Page No. : 1/7
Description
The BTC3906S3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTA1514S3
• Pb-free and halogen-free package
Symbol
BTC3906S3
Outline
SOT-323
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj
Tstg
Limits
180
160
6
600
200
625
-55~+150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
BTC3906S3
CYStek Product Specification