BTC3906N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208N3
Issued Date : 2002.05.11
Revised Date : 2005.01.12
Page No. : 1/4
BTC3906N3
Description
The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTA1514N3
Symbol
BTC3906N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Thermal Resistance, Junction to Ambient (Note )
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Free air condition.
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
180
160
6
600
225 (Note)
560
556 (Note)
223
150
-55~+150
Unit
V
V
V
mA
mW
mW
°C/W
°C/W
°C
°C
BTC3906N3
CYStek Product Specification