BTC3906M3_06 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC3906M3
Spec. No. : C208M3
Issued Date : 2003.08.18
Revised Date :2006.12.04
Page No. : 1/5
Description
The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTA1514M3
• Pb-free package
Symbol
BTC3906M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Power Dissipation
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
BTC3906M3
Limits
Unit
180
V
160
V
6
V
600
mA
0.6
W
1 (Note 1)
W
2 (Note 2)
W
150
°C
-55~+150
°C
CYStek Product Specification