BTC3906M3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208M3
Issued Date : 2003.08.18
Revised Date :
Page No. : 1/4
BTC3906M3
Description
The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTA1514M3
Symbol
BTC3906M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
0.6
W
Power Dissipation
Pd
1 (Note 1)
W
2 (Note 2)
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
BTC3906M3
CYStek Product Specification