BTC2880M3G Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2880M3G
Spec. No. : C319M3G
Issued Date : 2007.05.31
Revised Date : 2008.12.22
Page No. : 1/5
Features
• High breakdown voltage, BVCEO≥ 120V
• Large continuous collector current capability
• Low collector saturation voltage
• RoHS compliant and Halogen-free package
Symbol
BTC2880M3G
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
IB
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
BTC2880M3G
Limits
Unit
180
V
120
V
7
V
1
A
2
A
0.6
W
1 (Note 1)
W
2 (Note 2)
W
150
°C
-55~+150
°C
CYStek Product Specification