BTC2880A3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2880A3
Spec. No. : C319A3
Issued Date : 2007.05.04
Revised Date :
Page No. : 1/7
Description
The BTC2880A3 is designed for general purpose medium power amplifier and switching applications.
Features
• Low collector saturation voltage
• High breakdown voltage, VCEO=100V (min.)
• High collector current, IC(max)=1A (DC)
• Pb-free package
Symbol
BTC2880A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
BTC2880A3
ECB
Limits
180
100
7
1
2 (Note)
850
147
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
CYStek Product Specification