BTC1664M3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTC1664M3
Spec. No. : C223M3-A
Issued Date : 2007.05.02
Revised Date : 2013.08.06
Page No. : 1/6
Features
• Low VCE(sat), VCE(sat)=0.25V (typical), at IC / IB = 500mA / 20mA
• Pb-free lead plating package
Symbol
BTC1664M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj;Tstg
Limits
Unit
50
V
28
V
6
V
2
A
4 (Note 1)
A
0.6
W
1.5 (Note 2)
W
2.1 (Note 3)
208
83.3 *2
59.5 *3
-55~+150
°C
Note : 1. Single pulse, Pw = 10ms, duty ≤ 2%.
2. When mounted on 25mm×25mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air condition
3. When mounted on 50mm×50mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air condition
BTC1664M3
CYStek Product Specification