BTB772T3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB772T3/S
Features
• Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A
• Excellent current gain characteristics
• Complementary to BTD882T3/S
• Pb-free package is available
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 1/4
Equivalent Circuit
BTB772T3/S
Outline
TO-126
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
Collector Current
IC(DC)
IC(pulse)
Power Dissipation
Pd(Ta=25℃)
Pd(Tc=25℃)
Junction Temperature
Tj
Storage Temperature
Tstg
Note : *1. Single Pulse Pw≦350µs, Duty≦2%.
BTB772T3/S
Limit
Unit
-40
V
-30
V
-5
V
-3
A
-7
*1
A
1
W
10
150
°C
-55~+150
°C
CYStek Product Specification