BTB772AM3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Low VCE(sat) PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
BTB772AM3
Spec. No. : C817M3-H
Issued Date : 2003.06.17
Revised Date:2005.08.19
Page:1/5
Features
• Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A
• Excellent current gain characteristics
• Complementary to BTD882AM3
Symbol
BTB772AM3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power Dissipation
Pd
Thermal Resistance, Junction to
Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When Mounted on a ceramic board with area measuring 40×40×1mm.
BTB772AM3
Limit
-50
-50
-6
-3
-7 (Note 1)
600
1 (Note 2)
2 (Note 3)
208
125 (Note 2)
62.5 (Note 3)
150
-55~+150
Unit
V
V
V
A
A
mW
W
W
°C/W
°C/W
°C/W
°C
°C
CYStek Product Specification