BTB5839M3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB5839M3
Spec. No. : C240M3
Issued Date : 2012.10.18
Revised Date : 2013.08.07
Page No. : 1/8
Features
• Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A
• Excellent current gain characteristics
• Pb-free lead plating and halogen-free package
Symbol
BTB5893M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Pd
Tj ; Tstg
Limits
Unit
-50
V
-30
V
-7
V
-3
A
-5 (Note 1)
A
0.6
W
2 (Note 2)
W
-55~+150
°C
BTB5839M3
CYStek Product Specification