BTB5140N3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C809N3
Issued Date : 2010.10.14
Revised Date :
Page No. : 1/8
Low Vcesat PNP Epitaxial Planar Transistor
BTB5140N3
BVCEO
IC
RCESAT(TYP)
-40V
-2A
0.22Ω
Features
• Low VCE(sat), VCE(sat)=-0.25V (max), at IC / IB =- 500mA /- 50mA
• Pb-free package
Symbol
BTB5140N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-5
Collector Current(DC)
IC
-2
Peak Collector Current
ICM
-4
*1
Peak Base Current
IBM
-1
Power Dissipation
PD
300 *2
450 *3
Thermal Resistance, Junction to Ambient
RθJA
417 *2
278 *3
Thermal Resistance, Junction to Case
RθJC
39
Operating Junction and Storage Temperature Range Tj;Tstg
-65~+150
Note :1 Single pulse, Pw=10ms
2 When mounted on a FR-4 PCB, single-sided copper, tinplated and standard footprint.
3 When mounted on a FR-4 PCB, single-sided copper, tinplated and mounting pad for collector 1 cm².
Unit
V
A
mW
°C/W
°C
BTB5140N3
CYStek Product Specification