BTB1427M3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1427M3
Spec. No. : C816M3-A
Issued Date : 2003.05.26
Revised Date : 2005.11.28
Page No. : 1/5
Features
• Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A
• Excellent DC current gain characteristics
Symbol
BTB1427M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
ICP
Power Dissipation
Pd
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse Pw=10ms
2. When mounted on a 40 ×40 ×0.7 mm ceramic board.
BTB1427M3
Limits
Unit
-20
V
-15
V
-6
V
-5
-10 (Note 1)
A
0.5
2 (Note 2)
W
150
°C
-55~+150
°C
CYStek Product Specification