BTB1424N3_06 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Low VCE(sat) PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1424N3
Spec. No. : C817N3-R
Issued Date : 2003.04.03
Revised Date :2006.10.13
Page No. : 1/5
Features
• Excellent DC current gain characteristics
• Low Saturation Voltage
VCE(sat)=-0.25V(typ)(IC=-2A, IB=-100mA).
• Complementary to BTD2150N3
• Pb-free package
Symbol
BTB1424N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
Tj
Tstg
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
2. Device mounted on a ceramic board ( 600mm²×0.8mm)
BTB1424N3
Limits
-50
-50
-5
-3
-7
0.9 (Note 2)
138.9
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C
°C
CYStek Product Specification