BTB1386LN3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1386LN3
Features
• Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A
• Excellent DC current gain characteristics
• Complementary to BTD2098LN3
Spec. No. : C851N3
Issued Date : 2004.02.27
Revised Date : 2004.07.01
Page No. : 1/4
Symbol
BTB1386LN3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
PD
RθJA
Tj
Tstg
Limits
-20
-15
-6
-5
-10 (Note )
225
556
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTB1386LN3
CYStek Product Specification