BTB1240I3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1240I3
Features
• Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A
• Excellent current gain characteristics
• Complementary to BTD1862I3
Spec. No. : C812I3
Issued Date : 2003.07.03
Revised Date :
Page No. : 1/4
Symbol
BTB1240I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Pd
Tj
Tstg
BTB1240I3
Limits
Unit
-40
V
-30
V
-5
V
-2
A
-5 (Note)
A
1
W
10
W
150
°C
-55~+150
°C
CYStek Product Specification