BTB1198A3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
BTB1198A3
Spec. No. : C824A3
Issued Date : 2007.02.28
Revised Date : 2012.12.27
Page No. : 1/7
Features
• Low VCE(SAT), VCE(SAT)= -0.16V (Typ.) @ IC/IB=-500mA/-50mA
• High breakdown voltage, BVCEO=-80V
• Complementary to BTD1768A3
• Pb-free lead plating and halogen-free package
Symbol
BTB1198A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
BTB1198A3
Limits
-80
-80
-5
-1
-2 (Note)
750
167
-55~+150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
CYStek Product Specification