BTB1184J3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1184J3
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2005.10.04
Page No. : 1/5
Features
• Low VCE(sat)
• Excellent current gain characteristics
• Complementary to BTD1760J3
• Pb-free package
Symbol
BTB1184J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
-50
V
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
IC
ICP
Pd(TA=25℃)
Pd(TC=25℃)
-3
-7
*1
A
1
W
15 *2
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note : *1. Single Pulse Pw=10ms
*2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger.
BTB1184J3
CYStek Product Specification