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BTB1182J3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor | |||
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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1182J3
Features
⢠Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A
⢠Excellent current gain characteristics
⢠Complementary to BTD1758J3
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 1/4
Symbol
BTB1182J3
Outline
TO-252
Bï¼Base
Cï¼Collector
Eï¼Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TC=25â)
Junction Temperature
Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
BTB1182J3
Limits
Unit
-40
V
-30
V
-5
V
-2
A
-5 (Note)
A
10
W
150
°C
-55~+150
°C
CYStek Product Specification
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