BTA1797M3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Silicon PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C623M3
Issued Date : 2013.03.19
Revised Date : 2013.08.12
Page No. : 1/8
Silicon PNP Epitaxial Planar Transistor
BTA1797M3
BVCEO
IC
VCESAT(Max)
-50V
-2A
-0.2V
Description
• Low saturation voltage, VCE(SAT) = -0.2V(max.) at IC/IB=-1A/-50mA.
• High current capability.
• Excellent DC current gain characteristics.
• Pb-free lead plating and halogen-free package.
Symbol
BTA1797M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power Dissipation
PD
Thermal Resistance, Junction to Ambient
RθJA
Operating Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Note : 1. Single Pulse Pw≦300μs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on ceramic with area measuring 40×40×1 mm
BTA1797M3
Limits
-50
-50
-7
-2
-5 (Note 1)
0.5
1 (Note 2)
2 (Note 3)
250
125 (Note 2)
62.5 (Note 3)
-55~+150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
CYStek Product Specification