BTA1759M3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C309M3
Issued Date : 2003.06.30
Revised Date :
Page No. : 1/4
BTA1759M3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.
• Wide SOA (safe operation area).
• Complementary to BTC4505M3.
Symbol
BTA1759M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1.When mounted on FR-4 PCB with area measuring 10×10×1 mm
2.When mounted on ceramic with area measuring 40×40×1 mm
BTA1759M3
Limits
-400
-400
-6
-300
0.6
1 (Note 1)
2 (Note 2)
208
125 (Note 1)
62.5 (Note 2)
150
-55~+150
Unit
V
V
V
mA
W
W
W
°C/W
°C/W
°C/W
°C
°C
CYStek Product Specification