BTA1759A3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 1/4
BTA1759A3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typical VCE(sat) = -0.2V at Ic / IB = -20mA /-2mA.
• Wide SOA (safe operation area).
• Complementary to BTC4505A3.
Symbol
BTA1759A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
-400
V
-400
V
-7
V
-300
mA
625
mW
150
°C
-55~+150
°C
BTA1759A3
CYStek Product Specification