BTA1727L3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
BTA1727L3
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 1/4
Features
• High breakdown voltage, BVCEO=-400V
• Low saturation voltage
• High switching speed.
• Complementary to BTD2568L3
• Pb-free package
Symbol
BTA1727L3
B：Base
C：Collector
E：Emitter
Outline
SOT-223
C
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Power Dissipation @TC=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj
Tstg
BTA1727L3
Limits
Unit
-400
V
-400
V
-6
V
-300
mA
-1
A
-100
mA
5
W
150
°C
-55~+150
°C
CYStek Product Specification