BTA1300A3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low VCE(SAT) PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low VCE(SAT) PNP Epitaxial Planar Transistor
Spec. No. : C816A3
Issued Date : 2003.04.15
Revised Date :
Page No. : 1/4
BTA1300A3
Description
The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier
applications.
Features
• High DC current gain and excellent hFE linearity.
HFE(1)=140—600(VCE=-1V,IC=-0.5A)
HFE(2)=60(min), 120(typ.)(VCE=-1V,IC=-4A)
• Low Saturation Voltage
VCE(sat)=-0.5V(max)(IC=-2A,IB=-50mA).
Symbol
BTA1300A3
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCES
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Note 1: Single pulse, Pw≤10ms,Duty Cycle≤30%.
BTA1300A3
Limits
Unit
-20
V
-20
V
-10
V
-6
V
-2
-5
A
750
mW
150
°C
-55~+150
°C
CYStek Product Specification