BSS138C3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 50V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C834C3
Issued Date : 2012.06.25
Revised Date :
Page No. : 1/8
50V N-CHANNEL Enhancement Mode MOSFET
BSS138C3
BVDSS
ID
RDSON@VGS=10V, ID=220mA
RDSON@VGS=4.5V, ID=220mA
RDSON@VGS=2.5V,ID=220mA
Features
• Simple drive requirement
• Small package outline
• Pb-free package
RDSON@VGS=4V,ID=100mA
RDSON@VGS=2.5V,ID=80mA
50V
250mA
1.1Ω(typ)
1.3Ω(typ)
1.7Ω(typ)
1.3Ω(typ)
1.6Ω(typ)
Symbol
BSS138C3
Outline
SOT-523
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation ^TA=25℃
(Note 3)
TA=85℃
ESD susceptibility
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on FR-4 board.
4. Human body model, 1.5kΩ in series with 100pF
Limits
Unit
50
±20
V
250
mA
180
1
A
150
mW
80
1500 (Note 4)
V
-55~+150
°C
BSS138C3
CYStek Product Specification