BSS123BKN3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C591N3
Issued Date : 2016.12.07
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
BSS123BKN3
BVDSS
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=100mA
RDS(ON)@VGS=4.5V, ID=100mA
100V
0.19A
2.8Ω(typ)
3.0Ω(typ)
Features
• ESD protected gate
• High speed switching
• Pb-free lead plating and halogen-free package
• Easily designed drive circuits
• Low-voltage drive
• Easy to use in parallel
Symbol
BSS123BKN3
D
Outline
SOT-23
D
G
G：Gate
S ^{S：Source}
D：Drain
S
G
Ordering Information
Device
BSS123BKN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
BSS123BKN3
CYStek Product Specification