BCX56M3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C304M3
Issued Date : 2007.04.23
Revised Date : 2013.08.07
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BCX56M3
BVCEO
IC
VCESAT
100V
1A
0.13V(typ.)
Features
• High breakdown voltage, BVCEO≥ 100V
• Large continuous collector current capability
• Low collector saturation voltage
• Complementary to BCX53M3
• Pb-free lead plating package
Symbol
BCX56M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power Dissipation
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
BCX56M3
Limits
Unit
100
V
100
V
5
V
1
A
2
A
0.6
W
1 (Note 1)
W
2 (Note 2)
W
150
°C
-55~+150
°C
CYStek Product Specification