BCP69L3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Medium Power PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Medium Power PNP Epitaxial Planar Transistor
BCP69L3
Spec. No. : C314L3
Issued Date : 2005.09.29
Revised Date : 2006.01.11
Page No. : 1/4
Features
• For AF driver and output stage
• Low saturation voltage
• High collector current.
• Complementary to BCP68L3
• Pb-free package
Symbol
BCP69L3
B：Base
C：Collector
E：Emitter
Outline
SOT-223
C
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current(DC)
IC
-1
A
Collector Current(Pulse)
ICP
-2
A
Power Dissipation @TA=25℃
0.625 (Note 1&2)
Pd
1 (Note 1&3)
W
1.4 (Note 1&4)
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note : 1. SOT-223(SC-73) standard mounting conditions.
2. Device mounted on a FR-4 PCB, single side copper, tin plated, standard footprint for SOT-223
3. Device mounted on a FR-4 PCB, single side copper, tin plated, 1 cm² collector mounting pad.
4. Device mounted on a FR-4 PCB, single side copper, tin plated, 6 cm² collector mounting pad.
BCP69L3
CYStek Product Specification