BC817N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C906N3
Issued Date : 2003.05.12
Revised Date :
Page No. : 1/4
BC817N3
Description
• The BC817N3 is designed for general purpose switching and amplification applications.
• Complementary to BC807N3.
Features
• High current (max. 500mA)
• Low voltage (max 45V).
Symbol
BC817N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
BC817N3
Limits
Unit
50
V
45
V
5
V
500
mA
1
A
225
mW
150
°C
-55~+150
°C
CYStek Product Specification