ASD723SN Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Advanced Schottky Barrier Diodes

CYStech Electronics Corp.
Advanced Schottky Barrier Diodes
ASD723SN
Spec. No. : C343SN
Issued Date : 2003.08.19
Revised Date :2003.12.05
Page No. : 1/4
Features:
● Designed for mounting on small surface
● Low stored charge
● Majority carrier conduction
Mechanical data:
● Case: 0805(2012) Standard package, molded plastic
● Terminals : Solder plated, solderable per MIL-STD-750, method 2026.
● Polarity: Indicated by cathode band
● Mounting position: Any
● Weight: 4.8mg (approximately)
Absolute Maximum Ratings(Ta=25℃)
Characteristics
Symbol
Value
Unit
Continuous Reverse Voltage
VR
30
V
Average Rectified Current
IO
200
mA
Forward Surge Current @ 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IFSM
1.5
A
Capacitance between Terminals @ f=1MHz and applied
10VDC Reverse Voltage
CT
20
pF
Junction Temperature
Tj
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +125
°C
Electrical Characteristics ( TA=25°C, unless otherwise noted)
Parameter
Forward Voltage
Reverse Current
Condition
IF = 200mADC
VR = 30VDC
Symbol Min Typ Max Unit
V_F
- - 0.55 V
I_R
- - 15 µA
ASD723SN
CYStek Product Specification