2SK3541Y3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – ESD protected N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C800Y3
Issued Date : 2011.12.22
Revised Date :
Page No. : 1/8
ESD protected N-Channel Enhancement Mode MOSFET
2SK3541Y3
BVDSS
ID
RDSON@4V
Description
RDSON@2.5V
• Low voltage drive(2.5V drive) makes this device ideal for portable equipment.
• High speed switching
• ESD protected device
• Pb-free lead plating & halogen-free package
30V
100mA
3.4Ω (TYP)
6.9Ω (TYP)
Symbol
2SK3541Y3
G
Outline
SOT-723
D
G：Gate
S：Source
S
D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Reverse Drain Current
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width ≤ 10μs, Duty cycle ≤1%
*2. With each pin mounted on the recommended lands.
*3. Human body model, 1.5kΩ in series with 100pF
Symbol
BVDSS
VGS
ID
IDP
IDR
IDRP
PD
Tj ; Tstg
Rth,ja
2SK3541Y3
Limits
30
±20
±100
±200 *1
±100
±200 *1
150 *2
750 *3
-55~+150
833
Unit
V
V
mA
mA
mA
mA
mW
V
°C
°C/W
CYStek Product Specification