1N582XLA Datasheet, PDF (1/3 Pages) Cystech Electonics Corp. – 3.0Amp. Axial Leaded Schottky Barrier Diodes

CYStech Electronics Corp.
3.0Amp. Axial Leaded Schottky Barrier Diodes
1N582XLA Series
Spec. No. : C330LA
Issued Date : 2003.04.16
Revised Date :
Page No. : 1/3
Features
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
• Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0
• Low leakage current
• High surge capability
• High temperature soldering: 250°C/10 seconds at terminals
• High reliability
Mechanical Data
• Case: DO-201AD molded plastic.
• Terminals: Axial leads, solderable per MIL-STD-202 method 208
• Polarity: Indicated by cathode band.
• Weight: 1.10 gram
Maximum Ratings and Electrical Characteristics
(Rating at 25°C ambient temperature unless otherwise noted. Single phase, half wave, 60Hz, resistive or
inductive load. )
Parameter
Conditions
Type
Symbol 1N5820 1N5821 1N5822 Units
min typ max
Repetitive peak reverse
voltage
VRRM 20 30 40 V
Maximum RMS voltage
Maximum DC blocking
voltage
VRMS 14 21 28 V
VR 20 30 40 V
Maximum instantaneous
forward voltage
IF=3A (Note 1)
VF 0.475 0.500 0.525 V
Maximum average forward
rectified current
IO
3
A
Peak forward surge current
Maximum DC reverse
current
Maximum thermal
resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine wave superimposed
on rated load(JEDEC method)
VR=VRRM,TA=25℃(Note 1)
VR=VRRM,TA=125℃(Note 1)
Junction to ambient(Note 2)
f=1MHz and applied 4V reverse voltage
IFSM
IR
Rth,JA
CJ
Tstg
80
2
20
40
250
-65~+125
A
mA
mA
℃/w
pF
℃
Operating temperature
TJ
-65~+125
℃
Notes: 1.Pulse test, pulse width=300μsec, 2% duty cycle
1N582XLA
CYStek Product Specification